Plasma enhanced chemical vapor deposition (pecvd) method of forming vanadium oxide films and vanadium oxide thin-films prepared thereby
A Standard patent application filed on 09 October 1998 credited to Zhang, Ji-Guang ; Tracy, C. Edwin ; Liu, Ping ; Turner, John A. ; Benson, David K.

Details

Application number :

10772  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Plasma enhanced chemical vapor deposition (pecvd) method of forming vanadium oxide films and vanadium oxide thin-films prepared thereby  

Inventor :

Zhang, Ji-Guang ; Tracy, C. Edwin ; Liu, Ping ; Turner, John A. ; Benson, David K.  

Agent name :

 

Address for service :

 

Filing date :

09 October 1998  

Associated companies :

 

Applicant name :

Midwest Research Institute  

Applicant address :

 

Old name :

 

Original Source :

Go