Method of forming microcrystalline silicon film, photovoltaic element, and method of producing same
A Standard patent application filed on 26 November 1998 credited to Nishimoto, Tomonori

Details

Application number :
94162  
Application type :
Standard  
Application status :
SEALED  
Under opposition :
No  
Proceeding type :
 
Invention title :
Method of forming microcrystalline silicon film, photovoltaic element, and method of producing same  
Inventor :
Nishimoto, Tomonori  
Agent name :
SPRUSON & FERGUSON  
Address for service :
GPO Box 3898 SYDNEY NSW 2001  
Filing date :
26 November 1998  
Associated companies :
 
Applicant name :
Canon Kabushiki Kaisha  
Applicant address :
30-2 Shimomaruko 3-chome Ohta-ku Tokyo 146 Japan  
Old name :
 
Original Source :
Go  

Same Inventor