Low temperature chemical vapor deposition process for forming bismuth-con tainingceramic thin films useful in ferroelectric memory devices
A Standard patent application filed on 26 June 1998 credited to Hintermaier, Frank S. ; Dehm, Christine ; Hoenlein, Wolfgang ; Desrochers, Debra A. ; Roeder, Jeffrey F. ; Hendrix, Bryan C. ; Baum, Thomas H. ; Van Buskirk, Peter C.

Details

Application number :

83774  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Low temperature chemical vapor deposition process for forming bismuth-con tainingceramic thin films useful in ferroelectric memory devices  

Inventor :

Hintermaier, Frank S. ; Dehm, Christine ; Hoenlein, Wolfgang ; Desrochers, Debra A. ; Roeder, Jeffrey F. ; Hendrix, Bryan C. ; Baum, Thomas H. ; Van Buskirk, Peter C.  

Agent name :

 

Address for service :

 

Filing date :

26 June 1998  

Associated companies :

 

Applicant name :

Advanced Technology Materials, Inc.  

Applicant address :

 

Old name :

 

Original Source :

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