Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structures
A Standard patent application filed on 03 March 1998 credited to Otsuki, Tatsuo
;
Hayashi, Shinichiro
Details
Application number :
65131
Application type :
Standard
Application status :
CEASED
Under opposition :
No
Proceeding type :
Invention title :
Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structures
Inventor :
Otsuki, Tatsuo
;
Hayashi, Shinichiro
Agent name :
Cullens Patent and Trade Mark Attorneys
Address for service :
GPO Box 1074 BRISBANE QLD 4001
Filing date :
03 March 1998
Associated companies :
Applicant name :
Matsushita Electric Industrial Co., Ltd.
Applicant address :
1006, Oaza Kadoma, Kadoma-shi, Osaka 571-8501, Japan