Semiconductor devices with selectively doped iii-v nitride layers
A Standard patent application filed on 17 November 2000 credited to Kern, R. Scott
;
Goetz, Werner
Details
Application number :
17740
Application type :
Standard
Application status :
LAPSED
Under opposition :
No
Proceeding type :
Invention title :
Semiconductor devices with selectively doped iii-v nitride layers