Long channel trench-gated power mosfet having fully depleted body region
A Standard patent application filed on 21 May 1997 credited to Williams, Richard K. ; Floyd, Brian H. ; Chang, Mike F ; Darwish, Mohamed ; Grabowski, Wayne

Details

Application number :

31257  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Long channel trench-gated power mosfet having fully depleted body region  

Inventor :

Williams, Richard K. ; Floyd, Brian H. ; Chang, Mike F ; Darwish, Mohamed ; Grabowski, Wayne  

Agent name :

 

Address for service :

 

Filing date :

21 May 1997  

Associated companies :

 

Applicant name :

Siliconix Incorporated  

Applicant address :

 

Old name :

 

Original Source :

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