Method for constructing ferroelectric capacitor-like structures on silicon dioxide surfaces
A Standard patent application filed on 06 February 1997 credited to Boyer, Leonard O. ; Evans, Joseph T. Jr.

Details

Application number :

22607  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Method for constructing ferroelectric capacitor-like structures on silicon dioxide surfaces  

Inventor :

Boyer, Leonard O. ; Evans, Joseph T. Jr.  

Agent name :

 

Address for service :

 

Filing date :

06 February 1997  

Associated companies :

 

Applicant name :

Radiant Technologies, Inc.  

Applicant address :

 

Old name :

 

Original Source :

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