Preparation of CuxInyGazSen (x=0-2, y=0-2, z=0-2, n=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells
A Standard patent application filed on 11 December 1996 credited to Bhattacharya, Raghu N ; Contreras, Miguel A ; Keane, James ; Noufi, Rommel ; Tuttle, John R ; Ramanathan, Kannan ; Tennant, Andrew L

Details

Application number :

12849  

Application type :

Standard  

Application status :

CEASED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Preparation of CuxInyGazSen (x=0-2, y=0-2, z=0-2, n=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells  

Inventor :

Bhattacharya, Raghu N ; Contreras, Miguel A ; Keane, James ; Noufi, Rommel ; Tuttle, John R ; Ramanathan, Kannan ; Tennant, Andrew L  

Agent name :

Shelston IP  

Address for service :

Level 21 60 Margaret Street SYDNEY NSW 2000  

Filing date :

11 December 1996  

Associated companies :

 

Applicant name :

Davis, Joseph & Negley  

Applicant address :

3095 Laguna Vista Cove Austin TX 78746 United States Of America  

Old name :

 

Original Source :

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