Double heterojunction light emitting diode with gallium nitr ide active layer
A Standard patent application filed on 15 April 1996 credited to Kong, Hua-Shuang
;
Edmond, John Adam
Details
Application number :
55452
Application type :
Standard
Application status :
LAPSED
Under opposition :
No
Proceeding type :
Invention title :
Double heterojunction light emitting diode with gallium nitr ide active layer