A self-aligned method for forming deep trenches in shallow trenches for isolation of semiconductor devices
A Standard patent application filed on 04 September 2000 credited to Norstrom, Hans ; Johansson, Ted ; Bjormander, Carl

Details

Application number :

75654  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

A self-aligned method for forming deep trenches in shallow trenches for isolation of semiconductor devices  

Inventor :

Norstrom, Hans ; Johansson, Ted ; Bjormander, Carl  

Agent name :

 

Address for service :

 

Filing date :

04 September 2000  

Associated companies :

 

Applicant name :

Telefonaktiebolaget LM Ericsson (PUBL)  

Applicant address :

 

Old name :

 

Original Source :

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