A mos transistor having a composite gate electrode and method of fabrication
A Standard patent application filed on 16 November 1993 credited to Chau, Robert S ; Fraser, David B ; Yau, Leopoldo D ; Raghavan, Gopal ; Cadien, Kenneth C

Details

Application number :

56697  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

A mos transistor having a composite gate electrode and method of fabrication  

Inventor :

Chau, Robert S ; Fraser, David B ; Yau, Leopoldo D ; Raghavan, Gopal ; Cadien, Kenneth C  

Agent name :

 

Address for service :

 

Filing date :

16 November 1993  

Associated companies :

 

Applicant name :

Intel Corporation  

Applicant address :

 

Old name :

 

Original Source :

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