Improved method for isolating SiO2 layers from PZT, PLZT, and platinum layers
A Standard patent application filed on 18 February 1993 credited to Evans, Joseph Tate Jr.
;
Montross, Carl Elijah Jr.
;
Bullington, Jeff Allen
Details
Application number :
37745
Application type :
Standard
Application status :
CEASED
Under opposition :
No
Proceeding type :
Invention title :
Improved method for isolating SiO2 layers from PZT, PLZT, and platinum layers
Inventor :
Evans, Joseph Tate Jr.
;
Montross, Carl Elijah Jr.
;
Bullington, Jeff Allen
Agent name :
SPRUSON & FERGUSON
Address for service :
GPO Box 3898 SYDNEY NSW 2001
Filing date :
18 February 1993
Associated companies :
Applicant name :
Radiant Technologies, Inc.
Applicant address :
1009 Bradbury Drive S.E. Albuquerque NM 87106 United States Of America