Pin junction photovoltaic device having an i-type a-SiGe semiconductor layer with a maximal point for the Ge content
A Standard patent application filed on 14 April 1993 credited to Matsuda, Koichi ; Murakami, Tsutomu ; Sano, Masafumi

Details

Application number :

36902  

Application type :

Standard  

Application status :

CEASED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Pin junction photovoltaic device having an i-type a-SiGe semiconductor layer with a maximal point for the Ge content  

Inventor :

Matsuda, Koichi ; Murakami, Tsutomu ; Sano, Masafumi  

Agent name :

SPRUSON & FERGUSON  

Address for service :

GPO Box 3898 SYDNEY NSW 2001  

Filing date :

14 April 1993  

Associated companies :

 

Applicant name :

Canon Kabushiki Kaisha  

Applicant address :

3-30-2 Shimomaruko Ohta-ku Tokyo Japan  

Old name :

 

Original Source :

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