Method of preparing silicon carbide surfaces for crystal growth
A Standard patent application filed on 06 August 1990 credited to Palmour, John W ; Edmond, John A. ; Kong, Hua-Shuang

Details

Application number :

61806  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Method of preparing silicon carbide surfaces for crystal growth  

Inventor :

Palmour, John W ; Edmond, John A. ; Kong, Hua-Shuang  

Agent name :

 

Address for service :

 

Filing date :

06 August 1990  

Associated companies :

 

Applicant name :

Cree Research, Inc.  

Applicant address :

 

Old name :

 

Original Source :

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