Wordline voltage boosting circuits for complementary mosfet dynamic memories
A Standard patent application filed on 26 March 1990 credited to Dhong, Sang Hoo ; Lu, Nicky Chau-Chun ; Hwang, Wei

Details

Application number :

52169  

Application type :

Standard  

Application status :

CEASED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Wordline voltage boosting circuits for complementary mosfet dynamic memories  

Inventor :

Dhong, Sang Hoo ; Lu, Nicky Chau-Chun ; Hwang, Wei  

Agent name :

Davies Collison Cave  

Address for service :

Level 15 1 Nicholson Street MELBOURNE VIC 3000  

Filing date :

26 March 1990  

Associated companies :

 

Applicant name :

International Business Machines Corporation  

Applicant address :

Armonk, New York, 10504, United States of America  

Old name :

 

Original Source :

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