Light receiving member with first layer of A-SiGe (O,N) (H,X) and second layer of A-SiC wherein the first layer has unevenly distributed germanium atoms and both layers contain a conductivity controller
A Standard patent application filed on 06 February 1987 credited to Ohno, Shigeru ; Shirai, Shigeru

Details

Application number :
68589  
Application type :
Standard  
Application status :
CEASED  
Under opposition :
No  
Proceeding type :
 
Invention title :
Light receiving member with first layer of A-SiGe (O,N) (H,X) and second layer of A-SiC wherein the first layer has unevenly distributed germanium atoms and both layers contain a conductivity controller  
Inventor :
Ohno, Shigeru ; Shirai, Shigeru  
Agent name :
SPRUSON & FERGUSON  
Address for service :
GPO Box 3898 SYDNEY NSW 2001  
Filing date :
06 February 1987  
Associated companies :
 
Applicant name :
Canon Kabushiki Kaisha  
Applicant address :
3-30-2 Shimomaruko Ohta-ku Tokyo Japan  
Old name :
 
Original Source :
Go  

Same Inventor