Semiconductor device free from the current leakage through a semiconductor layer and method for manufacturing same
A Standard patent application filed on 22 August 1986 credited to Yamazaki, Shunpei ; Suzuki, Kunio ; Kinka, Mikio ; Fukada, Takeshi ; Koyanagi, Kaoru ; Kobayashi, Ippei ; Shibata, Katsuhiko ; Susukida, Masato ; Nagayama, Susumu ; Abe, Masayoshi

Details

Application number :

61781  

Application type :

Standard  

Application status :

CEASED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Semiconductor device free from the current leakage through a semiconductor layer and method for manufacturing same  

Inventor :

Yamazaki, Shunpei ; Suzuki, Kunio ; Kinka, Mikio ; Fukada, Takeshi ; Koyanagi, Kaoru ; Kobayashi, Ippei ; Shibata, Katsuhiko ; Susukida, Masato ; Nagayama, Susumu ; Abe, Masayoshi  

Agent name :

SPRUSON & FERGUSON  

Address for service :

GPO Box 3898 SYDNEY NSW 2001  

Filing date :

22 August 1986  

Associated companies :

 

Applicant name :

Semiconductor Energy Laboratory Co. Ltd.  

Applicant address :

398 Hase Atsugi-shi, Kanagawa-ken, 243 Japan  

Old name :

 

Original Source :

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