Multilayer ohmic contact for P-type semiconductor and method of making same
A Standard patent application filed on 06 December 1985 credited to Basol, Bulent Mehmet

Details

Application number :
50851  
Application type :
Standard  
Application status :
CEASED  
Under opposition :
No  
Proceeding type :
 
Invention title :
Multilayer ohmic contact for P-type semiconductor and method of making same  
Inventor :
Basol, Bulent Mehmet  
Agent name :
SPRUSON & FERGUSON  
Address for service :
GPO Box 3898 SYDNEY NSW 2001  
Filing date :
06 December 1985  
Associated companies :
 
Applicant name :
Sohio Commercial Development Company  
Applicant address :
Midland Building, Cleveland, Ohio, 44115, U.S.A.  
Old name :
 
Original Source :
Go  

Same Inventor