Power semiconductor devices having an insulating layer formed in a trench
A Standard patent application filed on 26 May 2000 credited to Baliga, Bantval Jayant

Details

Application number :

51730  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Power semiconductor devices having an insulating layer formed in a trench  

Inventor :

Baliga, Bantval Jayant  

Agent name :

 

Address for service :

 

Filing date :

26 May 2000  

Associated companies :

 

Applicant name :

Micro-Ohm Corporation  

Applicant address :

 

Old name :

 

Original Source :

Go  

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