Nitride based transistors on semi-insulating silicon carbide substrates
A Standard patent application filed on 02 June 1999 credited to Sheppard, Scott Thomas ; Palmour, John Williams ; Allen, Scott Thomas

Details

Application number :

11960  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Nitride based transistors on semi-insulating silicon carbide substrates  

Inventor :

Sheppard, Scott Thomas ; Palmour, John Williams ; Allen, Scott Thomas  

Agent name :

 

Address for service :

 

Filing date :

02 June 1999  

Associated companies :

 

Applicant name :

Cree Research, Inc.  

Applicant address :

 

Old name :

 

Original Source :

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