Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same
A Standard patent application filed on 24 May 2000 credited to Grabowski, Wayne B.

Details

Application number :

50446  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same  

Inventor :

Grabowski, Wayne B.  

Agent name :

 

Address for service :

 

Filing date :

24 May 2000  

Associated companies :

 

Applicant name :

Williams, Richard K.  

Applicant address :

 

Old name :

 

Original Source :

Go