High voltage integrated switching devices on a bonded and trenched silicon substrate
A Standard patent application filed on 14 April 2000 credited to Polce, Nestore A. ; Heisig, Mark F. ; Jones, Scotten W.

Details

Application number :

46445  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

High voltage integrated switching devices on a bonded and trenched silicon substrate  

Inventor :

Polce, Nestore A. ; Heisig, Mark F. ; Jones, Scotten W.  

Agent name :

 

Address for service :

 

Filing date :

14 April 2000  

Associated companies :

 

Applicant name :

CP Clare Corporation  

Applicant address :

 

Old name :

 

Original Source :

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