Method and apparatus for growing a metal nitride film of improved quality using a remote plasma enhanced deposition (RPECVD) process
A Provisional patent application filed on 07 September 2005 credited to Butcher, Kenneth Scott Alexander ; Chen, Patrick Po-Tsang ; Wintrebert et Fouquet, Marie-Pierre Francoise

Details

Application number :

2005904919  

Application type :

Provisional  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Method and apparatus for growing a metal nitride film of improved quality using a remote plasma enhanced deposition (RPECVD) process  

Inventor :

Butcher, Kenneth Scott Alexander ; Chen, Patrick Po-Tsang ; Wintrebert et Fouquet, Marie-Pierre Francoise  

Agent name :

Spruson & Ferguson  

Address for service :

Level 35 St Martins Tower 31 Market Street Sydney NSW 2000 Australia  

Filing date :

07 September 2005  

Associated companies :

 

Applicant name :

Macquarie University  

Applicant address :

Balaclava Road North Ryde NSW 2113 Australia  

Old name :

 

Original Source :

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