Composition for porous film formation, porous film, process for producing the same, interlayer insulation film and semiconductor device
A Standard patent application filed on 13 November 2003 credited to Yagihashi, Fujio ; Nakagawa, Hideo ; Hamada, Yoshitaka ; Iwabuchi, Motoaki ; Sasago, Masaru

Details

Application number :
2003301981  
Application type :
Standard  
Application status :
LAPSED  
Under opposition :
No  
Proceeding type :
 
Invention title :
Composition for porous film formation, porous film, process for producing the same, interlayer insulation film and semiconductor device  
Inventor :
Yagihashi, Fujio ; Nakagawa, Hideo ; Hamada, Yoshitaka ; Iwabuchi, Motoaki ; Sasago, Masaru  
Agent name :
 
Address for service :
 
Filing date :
13 November 2003  
Associated companies :
 
Applicant name :
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.  
Applicant address :
1006, Oaza Kadoma, Kadoma-shi, Osaka 571-8501  
Old name :
 
Original Source :
Go  

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