Fin field effect transistor memory cell, fin field effect transistor memory cell arrangement, and method for the production of a fin field effect transistor memory cell
A Standard patent application filed on 18 December 2003 credited to Hofmann, Franz ; Hartwich, Jessica ; Specht, Michael ; Dreeskornfeld, Lars ; Kretz, Johannes

Details

Application number :

2003293923  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Fin field effect transistor memory cell, fin field effect transistor memory cell arrangement, and method for the production of a fin field effect transistor memory cell  

Inventor :

Hofmann, Franz ; Hartwich, Jessica ; Specht, Michael ; Dreeskornfeld, Lars ; Kretz, Johannes  

Agent name :

 

Address for service :

 

Filing date :

18 December 2003  

Associated companies :

 

Applicant name :

INFINEON TECHNOLOGIES AG  

Applicant address :

St.-Martin-Str. 53, 81669 Munchen  

Old name :

 

Original Source :

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