Charge particle exposure method, complementarily divided mask used for it, and semiconductor device produced by using the method
A Standard patent application filed on 26 December 2003 credited to Nozue, Hiroshi
Details
Application number :
2003292695
Application type :
Standard
Application status :
LAPSED
Under opposition :
No
Proceeding type :
Invention title :
Charge particle exposure method, complementarily divided mask used for it, and semiconductor device produced by using the method
Inventor :
Nozue, Hiroshi
Agent name :
Address for service :
Filing date :
26 December 2003
Associated companies :
Applicant name :
LEEPL CORP.
Applicant address :
2968-2, Ishikawa-machi, Hachioji-shi, Tokyo 192-0032