Method for producing a buried tunnel junction in a surface-emitting semiconductor laser
A Standard patent application filed on 06 November 2003 credited to Amann, Markus-Christian
Details
Application number :
2003286155
Application type :
Standard
Application status :
LAPSED
Under opposition :
No
Proceeding type :
Invention title :
Method for producing a buried tunnel junction in a surface-emitting semiconductor laser