Planarizing gate material to improve gate critical dimension in semiconductor devices
A Standard patent application filed on 14 October 2003 credited to Yu, Bin ; Ahmed, Shibly S. ; Wang, Haihong ; Tabery, Cyrus E.

Details

Application number :

2003282842  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Planarizing gate material to improve gate critical dimension in semiconductor devices  

Inventor :

Yu, Bin ; Ahmed, Shibly S. ; Wang, Haihong ; Tabery, Cyrus E.  

Agent name :

 

Address for service :

 

Filing date :

14 October 2003  

Associated companies :

 

Applicant name :

ADVANCED MICRO DEVICES, INC.  

Applicant address :

One AMD Place, Mail Stop 68, P.O. Box 3453, Sunnyvale, CA 94088-3453  

Old name :

 

Original Source :

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