Gallium indium nitride arsenide hetero-field-effect transistor, its manufacturing method, and transmitter/receiver using same
A Standard patent application filed on 28 October 2003 credited to Suzuki, Asamira ; Yoshii, Shigeo ; Otsuka, Nobuyuki ; Mizuno, Koichi

Details

Application number :

2003275692  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Gallium indium nitride arsenide hetero-field-effect transistor, its manufacturing method, and transmitter/receiver using same  

Inventor :

Suzuki, Asamira ; Yoshii, Shigeo ; Otsuka, Nobuyuki ; Mizuno, Koichi  

Agent name :

 

Address for service :

 

Filing date :

28 October 2003  

Associated companies :

 

Applicant name :

MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.  

Applicant address :

1006, Oaza Kadoma, Kadoma-shi, Osaka 571-8501  

Old name :

 

Original Source :

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