Details

Application number :
2003267839  
Application type :
Standard  
Application status :
LAPSED  
Under opposition :
No  
Proceeding type :
 
Invention title :
Circuit for driving gate of power mosfet  
Inventor :
Ryoo, Tae-Ha ; Jang, Byung-Tak  
Agent name :
 
Address for service :
 
Filing date :
29 September 2003  
Associated companies :
 
Applicant name :
DMB TECHNOLOGY CO., LTD.  
Applicant address :
Rm. 202 Dongah Venturetower, 538-8 Bongmyung-dong, Yusong-gu, Daejeon-city 305-709  
Old name :
 
Original Source :
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Same Inventor