Insulated-gate semiconductor device and approach involving junction-induced intermediate region
A Standard patent application filed on 19 June 2003 credited to Gopalakrishnan, Kailash
;
Plummer, James D.
Details
Application number :
2003258948
Application type :
Standard
Application status :
LAPSED
Under opposition :
No
Proceeding type :
Invention title :
Insulated-gate semiconductor device and approach involving junction-induced intermediate region
Inventor :
Gopalakrishnan, Kailash
;
Plummer, James D.
Agent name :
Address for service :
Filing date :
19 June 2003
Associated companies :
Applicant name :
THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY