Details

Application number :
2003255034  
Application type :
Standard  
Application status :
LAPSED  
Under opposition :
No  
Proceeding type :
 
Invention title :
Method of forming insulation film on semiconductor substrate  
Inventor :
Hongoh, Toshiaki  
Agent name :
 
Address for service :
 
Filing date :
14 August 2003  
Associated companies :
 
Applicant name :
TOKYO ELECTRON LIMITED  
Applicant address :
3-6, Akasaka 5-chome, Minato-ku, Tokyo 107-8481  
Old name :
 
Original Source :
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Same Inventor