Heterojunction field effect transistors using silicon-germanium and silicon-carbon alloys
A Standard patent application filed on 01 July 2003 credited to Webb, Douglas A. ; Ward, Douglas

Details

Application number :

2003247702  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Heterojunction field effect transistors using silicon-germanium and silicon-carbon alloys  

Inventor :

Webb, Douglas A. ; Ward, Douglas  

Agent name :

 

Address for service :

 

Filing date :

01 July 2003  

Associated companies :

 

Applicant name :

ADVANCED TECHNOLOGY MATERIALS, INC.  

Applicant address :

Margaret Chappuis, 7 Commerce Drive, Danbury, CT 06810  

Old name :

 

Original Source :

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