Barium cadmium tantalum-based compound having high dielectric properties and method of making the same
A Standard patent application filed on 30 June 2003 credited to Kim, Jihoon ; Liu, Shaojun ; Newman, Nathan ; Van Schilfgaarde, Mark

Details

Application number :

2003247663  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Barium cadmium tantalum-based compound having high dielectric properties and method of making the same  

Inventor :

Kim, Jihoon ; Liu, Shaojun ; Newman, Nathan ; Van Schilfgaarde, Mark  

Agent name :

 

Address for service :

 

Filing date :

30 June 2003  

Associated companies :

 

Applicant name :

VAN SCHILFGAARDE, Mark  

Applicant address :

7922 S. McAllister, Tempe, AZ 85284  

Old name :

 

Original Source :

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