Method for galvanically forming conductor structures of high-purity copper in the production of integrated circuits
A Standard patent application filed on 11 January 2000 credited to Thies, Andreas ; Meyer, Heinrich

Details

Application number :
31435  
Application type :
Standard  
Application status :
LAPSED  
Under opposition :
No  
Proceeding type :
 
Invention title :
Method for galvanically forming conductor structures of high-purity copper in the production of integrated circuits  
Inventor :
Thies, Andreas ; Meyer, Heinrich  
Agent name :
 
Address for service :
 
Filing date :
11 January 2000  
Associated companies :
 
Applicant name :
Atotech Deutschland GmbH  
Applicant address :
 
Old name :
 
Original Source :
Go  

Same Inventor