Piezoelectric device comprising ultrahighly-orientated aluminum nitride thin film and its manufacturing method
A Standard patent application filed on 29 May 2003 credited to Tateyama, Hiroshi ; Jinushi, Keiichiro ; Sunagawa, Yoshitaka ; Ueno, Naohiro ; Umeuchi, Yoshihiro ; Akiyama, Morito

Details

Application number :

2003241939  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Piezoelectric device comprising ultrahighly-orientated aluminum nitride thin film and its manufacturing method  

Inventor :

Tateyama, Hiroshi ; Jinushi, Keiichiro ; Sunagawa, Yoshitaka ; Ueno, Naohiro ; Umeuchi, Yoshihiro ; Akiyama, Morito  

Agent name :

 

Address for service :

 

Filing date :

29 May 2003  

Associated companies :

 

Applicant name :

NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY  

Applicant address :

1-3-1, Kasumigaseki, Chiyoda-ku, Tokyo 100-8921  

Old name :

 

Original Source :

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