Method for producing semi-insulating resistivity in high purity silicon carbide crystals
A Standard patent application filed on 10 June 2003 credited to Malta, David Phillip
;
Mueller, Stephan Georg
;
Jenny, Jason Ronald
;
Hobgood, Hudson Mcdonald
Details
Application number :
2003237489
Application type :
Standard
Application status :
LAPSED
Under opposition :
No
Proceeding type :
Invention title :
Method for producing semi-insulating resistivity in high purity silicon carbide crystals
Inventor :
Malta, David Phillip
;
Mueller, Stephan Georg
;
Jenny, Jason Ronald
;
Hobgood, Hudson Mcdonald