Method for production of a layer of silicon carbide or a nitride of a group iii element on a suitable substrate
A Standard patent application filed on 13 February 2003 credited to Leycuras, Andre

Details

Application number :
2003222909  
Application type :
Standard  
Application status :
LAPSED  
Under opposition :
No  
Proceeding type :
 
Invention title :
Method for production of a layer of silicon carbide or a nitride of a group iii element on a suitable substrate  
Inventor :
Leycuras, Andre  
Agent name :
 
Address for service :
 
Filing date :
13 February 2003  
Associated companies :
 
Applicant name :
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE  
Applicant address :
3, rue Michel Ange, F-75794 Paris Cedex 16  
Old name :
 
Original Source :
Go  

Same Inventor