Silicon carbide based porous material and method for production thereof
A Standard patent application filed on 31 March 2003 credited to Morimoto, Kenji ; Tabuchi, Yuuichirou ; Kawasaki, Shinji ; Furukawa, Masahiro

Details

Application number :

2003221017  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Silicon carbide based porous material and method for production thereof  

Inventor :

Morimoto, Kenji ; Tabuchi, Yuuichirou ; Kawasaki, Shinji ; Furukawa, Masahiro  

Agent name :

 

Address for service :

 

Filing date :

31 March 2003  

Associated companies :

 

Applicant name :

NGK INSULATORS, LTD.  

Applicant address :

2-56, Suda-cho, Mizuho-ku, Nagoya-shi, Aichi 467-8530  

Old name :

 

Original Source :

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