Method for the production of a bragg lattice in a semiconductor layer sequence by etching and semiconductor element
A Standard patent application filed on 08 January 2003 credited to Erbert, Gotz ; Braun, Matthias ; Wenzel, Hans

Details

Application number :

2003215496  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Method for the production of a bragg lattice in a semiconductor layer sequence by etching and semiconductor element  

Inventor :

Erbert, Gotz ; Braun, Matthias ; Wenzel, Hans  

Agent name :

 

Address for service :

 

Filing date :

08 January 2003  

Associated companies :

 

Applicant name :

FORSCHUNGSVERBUND BERLIN E.V.  

Applicant address :

Rudower Chaussee 17, 12489 Berlin  

Old name :

 

Original Source :

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