Magnetic reluctance element and method for preparation thereof and nonvolatile memory comprising the element
A Standard patent application filed on 14 February 2003 credited to Odagawa, Akihiro ; Hiramoto, Masayoshi ; Kawashima, Yoshio ; Matsukawa, Nozomu ; Sugita, Yasunari ; Satomi, Mitsuo

Details

Application number :

2003211196  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Magnetic reluctance element and method for preparation thereof and nonvolatile memory comprising the element  

Inventor :

Odagawa, Akihiro ; Hiramoto, Masayoshi ; Kawashima, Yoshio ; Matsukawa, Nozomu ; Sugita, Yasunari ; Satomi, Mitsuo  

Agent name :

 

Address for service :

 

Filing date :

14 February 2003  

Associated companies :

 

Applicant name :

MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.  

Applicant address :

1006-banchi, Oaza-Kadoma, Kadoma-shi, Osaka 571-8501  

Old name :

 

Original Source :

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