Boron phosphide-based semiconductor device, production method thereof, light-emitting diode and boron phosphide-based semiconductor layer
A Standard patent application filed on 28 January 2003 credited to Yamashita, Tamotsu
;
Udagawa, Takashi
Details
Application number :
2003206129
Application type :
Standard
Application status :
LAPSED
Under opposition :
No
Proceeding type :
Invention title :
Boron phosphide-based semiconductor device, production method thereof, light-emitting diode and boron phosphide-based semiconductor layer
Inventor :
Yamashita, Tamotsu
;
Udagawa, Takashi
Agent name :
Address for service :
Filing date :
28 January 2003
Associated companies :
Applicant name :
SHOWA DENKO K.K.
Applicant address :
13-9, Shiba Daimon 1-chome, Minato-ku, Tokyo 105-8518