Nitride semiconductor laser device and its manufacturing method
A Standard patent application filed on 20 January 2003 credited to Ishibashi, Akihiko ; Hasegawa, Yoshiaki ; Yokogawa, Toshiya ; Sugahara, Gaku

Details

Application number :

2003203262  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Nitride semiconductor laser device and its manufacturing method  

Inventor :

Ishibashi, Akihiko ; Hasegawa, Yoshiaki ; Yokogawa, Toshiya ; Sugahara, Gaku  

Agent name :

 

Address for service :

 

Filing date :

20 January 2003  

Associated companies :

 

Applicant name :

MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.  

Applicant address :

1006, Oaza Kadoma, Kadoma-shi, Osaka 571-8501  

Old name :

 

Original Source :

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