Method for fabricating a high voltage power mosfet having a voltage sustaining region that includes doped columns formed by rapid diffusion
A Standard patent application filed on 30 December 2002 credited to Blanchard, Richard A.

Details

Application number :

2002358312  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Method for fabricating a high voltage power mosfet having a voltage sustaining region that includes doped columns formed by rapid diffusion  

Inventor :

Blanchard, Richard A.  

Agent name :

 

Address for service :

 

Filing date :

30 December 2002  

Associated companies :

 

Applicant name :

GENERAL SEMICONDUCTOR, INC.  

Applicant address :

10 Melville Park Road, Melville, NY 11747-3113  

Old name :

 

Original Source :

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