Two-step ion implantation method with active wafer cooling for buried oxide formation
A Standard patent application filed on 04 November 2002 credited to Erokhin, Yuri ; Blake, Julian G.

Details

Application number :

2002356902  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Two-step ion implantation method with active wafer cooling for buried oxide formation  

Inventor :

Erokhin, Yuri ; Blake, Julian G.  

Agent name :

 

Address for service :

 

Filing date :

04 November 2002  

Associated companies :

 

Applicant name :

IBIS TECHNOLOGY CORPORATION  

Applicant address :

32A Cherry Hill Drive, Danvers, MA 01923  

Old name :

 

Original Source :

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