Method of manufacture for 80 nanometer diameter resonant tunneling diode with improved peak-to-valley ratio and resonant tunneling diode therefrom
A Standard patent application filed on 07 August 2002 credited to Chow, David
;
Thomas, Stephen
;
Elliott, Ken
Details
Application number :
2002355607
Application type :
Standard
Application status :
LAPSED
Under opposition :
No
Proceeding type :
Invention title :
Method of manufacture for 80 nanometer diameter resonant tunneling diode with improved peak-to-valley ratio and resonant tunneling diode therefrom