Dual gate oxide high-voltage semiconductor device and method for forming the same
A Standard patent application filed on 20 November 2002 credited to Letavic, Theodore J. ; Simpson, Mark R.

Details

Application number :

2002348845  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Dual gate oxide high-voltage semiconductor device and method for forming the same  

Inventor :

Letavic, Theodore J. ; Simpson, Mark R.  

Agent name :

 

Address for service :

 

Filing date :

20 November 2002  

Associated companies :

 

Applicant name :

KONINKLIJKE PHILIPS ELECTRONICS N.V.  

Applicant address :

Groenewoudseweg 1, NL-5621 BA Eindhoven  

Old name :

 

Original Source :

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