A scalable flash eeprom memory cell with floating gate spacer wrapped by control gate, and method of manufacturing the same
A Standard patent application filed on 17 October 2002 credited to Jenq, Ching-Shi ; Wang, Ching Dong

Details

Application number :

2002342085  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

A scalable flash eeprom memory cell with floating gate spacer wrapped by control gate, and method of manufacturing the same  

Inventor :

Jenq, Ching-Shi ; Wang, Ching Dong  

Agent name :

 

Address for service :

 

Filing date :

17 October 2002  

Associated companies :

 

Applicant name :

INTEGRATED MEMORY TECHNOLOGIES, INC.  

Applicant address :

2285 Martin Avenue, Suite A, Santa Clara, CA 95050  

Old name :

 

Original Source :

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