Gunn effect semiconductor component such as a hetero-bipolar transistor (hbt) for generating frequency-variable oscillations
A Standard patent application filed on 24 July 2002 credited to Heymann, Peter ; Rudolph, Matthias

Details

Application number :

2002325364  

Application type :

Standard  

Application status :

LAPSED  

Under opposition :

No  

Proceeding type :

 

Invention title :

Gunn effect semiconductor component such as a hetero-bipolar transistor (hbt) for generating frequency-variable oscillations  

Inventor :

Heymann, Peter ; Rudolph, Matthias  

Agent name :

 

Address for service :

 

Filing date :

24 July 2002  

Associated companies :

 

Applicant name :

FORSCHUNGSVERBUND BERLIN E.V.  

Applicant address :

Rudower Chaussee 17, 12489 Berlin  

Old name :

 

Original Source :

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