A semiconductor device having a metal barrier layer for a dielectric material having a high dielectric constant and method of manufacture thereof
A Standard patent application filed on 11 January 2000 credited to Alers, Glenn B.
;
Roy, Pradip K.
;
Merchant, Sailesh M.
Details
Application number :
24113
Application type :
Standard
Application status :
LAPSED
Under opposition :
No
Proceeding type :
Invention title :
A semiconductor device having a metal barrier layer for a dielectric material having a high dielectric constant and method of manufacture thereof
Inventor :
Alers, Glenn B.
;
Roy, Pradip K.
;
Merchant, Sailesh M.